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Proceedings Paper

Pulsed Laser Processing Of Silicon Via Absorption By Free Carriers
Author(s): R. B. James
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Paper Abstract

Using transmission electron microscopy, we show that melting and subsequent defect-free recrystallization can be obtained in silicon by absorbing the pulse energy via free-carrier transitions. We use a pulsed CO2 laser to anneal extended lattice defects caused by high-temperature diffusion of phosphorus into lightly doped silicon. For pulse energy densities exceeding a threshold value, we find that the spherical precipitates and dislocation loops in the diffused layer are dissolved by C02 laser-induced melting, which results in a large increase in the electrically active phosphorus in the near-surface region. We also used the differential absorption between layers with different free-carrier concentrations to achieve melting of a buried ion-implanted layer, without melting the material that encapsulates the molten layer. This type of melting phenomenon is likely not obtainable using a laser where the absorption is dominated by an intrinsic mechanism. New applications using free-carrier absorption as a means to process silicon samples are discussed.

Paper Details

Date Published: 26 June 1986
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961201
Show Author Affiliations
R. B. James, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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