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Proceedings Paper

Increasing The Conductivity Of Polycrystalline Silicon By Rapid Thermal Processing Before And After Ion Implantation
Author(s): R. B. Gregory; S. R. Wilson; W. M. Paulson; S. J. Krause; J. A. Leavitt; L. C. McIntyre; J. L. Seerveld; P. Stoss
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Paper Abstract

Polycrystalline silicon films on oxidized silicon wafers have been subjected to rapid thermal processing before arsenic or boron ion implantation (pre-implant anneal). The films have then been ion implanted and given another rapid thermal process step to activate the dopant and repair the implant damage. The pre-implant anneal has caused the as-deposited grain size to increase by approximately a factor of ten. After the activation anneal these films have shown a 10 to 100% lower sheet resistance than films which did not receive a pre-implant anneal. The increase in grain size by the pre-implant anneal reduced the grain boundary area and as a result reduced the amount of dopant trapped in the grain boundaries relative to that which was actually inside the grains.

Paper Details

Date Published: 26 June 1986
PDF: 8 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961200
Show Author Affiliations
R. B. Gregory, Motorola, Inc. (United States)
S. R. Wilson, Motorola, Inc. (United States)
W. M. Paulson, Motorola, Inc. (United States)
S. J. Krause, Arizona State University (United States)
J. A. Leavitt, University of Arizona (United States)
L. C. McIntyre, University of Arizona (United States)
J. L. Seerveld, University of Arizona (United States)
P. Stoss, University of Arizona (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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