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Proceedings Paper

Characteristics Of Rapidly Grown Thin Oxides
Author(s): S. Mehta; C. J. Russo; D. Hodul
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Paper Abstract

Thin oxides with thicknesses in the range of 100 - 350 Å have been grown by rapid thermal oxidation using an ambient gas mixture of oxygen and argon, and pure oxygen. Growth rates as a function of temperature and time have been studied. Silicon samples of both <111> and <100> crystal orientation have been studied. Thickness uniformities for steady state and transient annealing have also been measured.

Paper Details

Date Published: 26 June 1986
PDF: 4 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961199
Show Author Affiliations
S. Mehta, Varian/Extrion Division (United States)
C. J. Russo, Varian/Extrion Division (United States)
D. Hodul, Varian Research Center (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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