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Proceedings Paper

Rapid Thermal Growth Of Thin Insulators On Si (Invited)
Author(s): Mehrdad M. Moslehi; Krishna C. Saraswat; Steven C. Shatas
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Paper Abstract

Rapid thermal processing of silicon in oxygen and ammonia reactive ambients has been performed successfully to grow thin layers of Si02, silicon nitride, and silicon nitroxide for high quality gate insulators of submicron CMOS VLSI.

Paper Details

Date Published: 26 June 1986
PDF: 23 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961198
Show Author Affiliations
Mehrdad M. Moslehi, Stanford University (United States)
Krishna C. Saraswat, Stanford University (United States)
Steven C. Shatas, Stanford University (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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