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Proceedings Paper

Characterization Of Electron Traps Resulting From Oxygen Precipitation In Cz Silicon
Author(s): J. Whitfield; C. J. Varker; S. S. Chan; S. R. Wilson; R. W. Carpenter; S. J. Krause; E. R. Weber
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Paper Abstract

CZ wafers have been heat treated with either a 2 step anneal (16 hrs. @ 800°C/16 hrs. @ 1050°C) or a single step anneal (16 hrs. @ 1050°C). Deep level transient spectroscopy and minority carrier lifetime measurements were obtained on processed wafers containing diode-capacitor arrays. Wafers from the seed end of the crystal (initial oxygen concentration [Oi ~ 40 ppm) with the 2 step anneal showed 2 electron traps E 1 (EC-ET = 0.41 ± 0.02 eV), and E2 (EC-ET = 0.23 ± 0.03 eV), the dominant trap E 1 is shown to correlate with generation lifetime. Wafers implanted with oxygen at 400 keV or 3.5 MeV with doses of 3 X 1015 and 1 X 1016 atoms cm-2 with similar heat treatments reveal electron traps with the same energies as those observed in the unimplanted samples. The high dose samples show a much more complicated spectra, in which E1 and E2 are present. TEM analysis of the seed end unimplanted samples with 2 step anneal show plate type precipitates with punched out loops and dislocations. The tang-end showed octahedral precipitates. The cross sectional view of the implanted samples reveal the precipitates and dislocation loops in a well defined layer. ESR measurements on similar samples with similar anneals reveal residual phosphorus and thermal donors and a new, broad resonance in some of the 2 step annealed samples. This board peak which is not fully analyzed suggests a signature that is not typical of isolated paramagnetic point defects.

Paper Details

Date Published: 26 June 1986
PDF: 9 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961197
Show Author Affiliations
J. Whitfield, Motorola Semiconductor Research Development Laboratory (United States)
C. J. Varker, Motorola Semiconductor Research Development Laboratory (United States)
S. S. Chan, Motorola Semiconductor Research Development Laboratory (United States)
S. R. Wilson, Motorola Semiconductor Research Development Laboratory (United States)
R. W. Carpenter, Arizona State University (United States)
S. J. Krause, Arizona State University (United States)
E. R. Weber, Lawrence Berkeley Laboratory (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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