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Proceedings Paper

Study Of The Effects Of Strain In Indium-Doped Gallium Arsenide By Electroreflectance And Photocapacitance
Author(s): Paul M. Raccah; J. W. Garland; Z. Zhang; S. Mioc; Yang De; Amy H. M. Chu; S, McGuigan; R. N. Thomas
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Paper Abstract

Electrolyte electroreflectance and photocapacitance measurements have been performed on In-doped and on undoped GaAs. They verify that In doping generates large inhomogeneous strains which locally lower the stability of the zincblende structure compared to the chalcopyrite structure, but that it lowers the density of dislocations and of antisites. They also show that the EL2 complex is intimately associated with As antisites.

Paper Details

Date Published: 26 June 1986
PDF: 5 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961192
Show Author Affiliations
Paul M. Raccah, University of Illinois (United States)
J. W. Garland, University of Illinois (United States)
Z. Zhang, University of Illinois (United States)
S. Mioc, University of Illinois (United States)
Yang De, University of Illinois (United States)
Amy H. M. Chu, University of Illinois (United States)
S, McGuigan, Westinghouse R. & D. Center (United States)
R. N. Thomas, Westinghouse R. & D. Center (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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