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Proceedings Paper

Spatially Resolved Photoluminescence Of GaAs
Author(s): A. T. Hunter
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Paper Abstract

Photoluminescence images of Czochralski grown GaAs reveal large fluctuations in the concentration of defects that lower the lifetime of photogenerated electrons or holes. Images made with ~1 μm spatial resolution in the vicinity of isolated dislocations in low-dislocation-density In-alloyed GaAs reveal bright rings ~300μm in diameter. The features have an interior dark spot approximately 100 ym across centered on the dislocation. The ratio of intensity in the bright ring to that of regions far from dislocations is as large as 103. The intensity of the dark region in the center of the feature is up to a factor of ten lower than the peak intensity. These observations demonstrate that dislocations play an important role in generating or absorbing defects that lower the electron or hole lifetime.

Paper Details

Date Published: 26 June 1986
PDF: 4 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961191
Show Author Affiliations
A. T. Hunter, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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