Proceedings Paper
Order-Disorder Transitions In Strained Semiconductor Systems| Format | Member Price | Non-Member Price |
|---|---|---|
| $14.40 | $18.00 |
Paper Abstract
We describe the observation of a strain-induced order-disorder transition in the alloy layers of a GeSi/Si superlattice and discuss the possible implications of the transition for the opto-electronic properties of this important system.
Paper Details
Date Published: 26 June 1986
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961186
Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961186
Show Author Affiliations
A. Ourmazd, AT&T Bell Laboratories (United States)
J. C. Bean, AT&T Bell Laboratories (United States)
Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)
© SPIE. Terms of Use
