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Proceedings Paper

Order-Disorder Transitions In Strained Semiconductor Systems
Author(s): A. Ourmazd; J. C. Bean
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Paper Abstract

We describe the observation of a strain-induced order-disorder transition in the alloy layers of a GeSi/Si superlattice and discuss the possible implications of the transition for the opto-electronic properties of this important system.

Paper Details

Date Published: 26 June 1986
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961186
Show Author Affiliations
A. Ourmazd, AT&T Bell Laboratories (United States)
J. C. Bean, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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