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Proceedings Paper

Submicrometer Linewidth Production On Integrated Circuit Materials By Uv Laser Radical Etching
Author(s): Gary L. Loper; Martin D. Tabat
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Paper Abstract

We have developed ultraviolet laser-induced, radical-etching processes that can provide practical etch rates and selectivities for most of the important substrate combinations used in silicon microelectronic devices. These processes have been demonstrated, in simple proximity and projection exposure experiments, to produce etch features on surfaces with dimensions of a few tenths of a micrometer. The technique could significantly simplify the fabrication of submicrometer linewidth devices by eliminating photoresist patterning and acid or plasma etching processing steps.

Paper Details

Date Published: 5 August 1986
PDF: 7 pages
Proc. SPIE 0621, Manufacturing Applications of Lasers, (5 August 1986); doi: 10.1117/12.961151
Show Author Affiliations
Gary L. Loper, The Aerospace Corporation (United States)
Martin D. Tabat, The Aerospace Corporation (United States)


Published in SPIE Proceedings Vol. 0621:
Manufacturing Applications of Lasers
Peter K. Cheo, Editor(s)

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