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Proceedings Paper

Laser Assisted Etching For Microelectronic Applications
Author(s): Carol I.H. Ashby
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Paper Abstract

There are four general types of laser-assisted processes which have been employed for dry etching organics, semiconductors, and metals used in microelectronics [1]. The first is laser ablation or laser-induced evaporation, which is physical rather than chemical in nature [2-7]. The second type of process uses the laser to heat the material surface, thereby increasing the rate of a thermally activated chemical reaction [8-10]. The third is gas-phase photochemical etching in which the laser is used to generate the reactive gas-phase species responsible for etching a semiconductor or metal [11-16]. The fourth type is surface photochemical etching in which the laser is used to create the photogenerated carriers responsible for etching; highly selective etching can be achieved by capitalizing on the surface electronic properties which influence carrier generation or subsequent behavior [17-20]. These four laser-assisted dry etching methods will be reviewed, with special emphasis on the advantages and disadvantages of the three chemical processes for etching semiconductor materials.

Paper Details

Date Published: 5 August 1986
PDF: 1 pages
Proc. SPIE 0621, Manufacturing Applications of Lasers, (5 August 1986); doi: 10.1117/12.961150
Show Author Affiliations
Carol I.H. Ashby, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0621:
Manufacturing Applications of Lasers
Peter K. Cheo, Editor(s)

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