Share Email Print

Proceedings Paper

Recent Development In Amorphous Silicon Image Sensor
Author(s): Takashi Ozawa; Mutsuo Takenouchi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Contact type linear image sensor arouse a great interest as a compact image reading component for a facsimile, an image scanner and many other applications. Among those, amorphous silicon linear image sensors which consist of Cr/a-Si:H/ITO structure have excellent features such as capability of fabrication of large area devices and material stability. B4 size, 200spi image sensors are now on mass production. B4 size, 400spi image sensors have been developed. And very large image sensors with 36 inch length and color sensors also have been developed. a-Si:H TFT driven image sensors which can reduce the cost are under development.

Paper Details

Date Published: 12 March 1986
PDF: 7 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961083
Show Author Affiliations
Takashi Ozawa, Fuji Xerox Co., Ltd. (Japan)
Mutsuo Takenouchi, Fuji Xerox Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

© SPIE. Terms of Use
Back to Top