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Proceedings Paper

Amorphous Si:H Contact Linear Image Sensor
Author(s): Setsuo Kaneko; Fujio Okumura; Mikio Sakamoto; Hiroyuki Uchida; Yuji Kajiwara
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Paper Abstract

A contact linear image sensor using a-Si:H heterojunction photodiode array has been developed. The sensor is composed of a pair of LED array, a rod lens array and a document width linear image sensor in which a-Si:H photodiode array and driving ICs are mounted on the same glass The a-Si:H diode has ITO/p-a-SiC/a-Si:H/metal structure. It exhibits as high as 104 photo-to-dark current ratio and quick photoresponse because of excellent blocking characteristics and large built in potential of heterojunction. The contact sensor has been operated with 1 msec/line scanning speed. Performance tests show excellent results with 8 lines/mm resolution. Images have been satisfactorily recorded using a thermal printer. Moreover, thin film image sensor using a-Si:H TFT will be discussed as a lower cost linear image sensor.

Paper Details

Date Published: 12 March 1986
PDF: 6 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961082
Show Author Affiliations
Setsuo Kaneko, NEC Corporation (Japan)
Fujio Okumura, NEC Corporation (Japan)
Mikio Sakamoto, NEC Corporation (Japan)
Hiroyuki Uchida, NEC Corporation (Japan)
Yuji Kajiwara, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

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