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Proceedings Paper

Picosecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon
Author(s): Dale M. Roberts; Terry L. Gustafson
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Paper Abstract

We measure picosecond photoinduced absorption in a low defect sample of hydrogenated amorphous silicon. Our results indicate that both the imaginary and real parts of the complex index of refraction contribute to the observed decay of the induced transmittance. We present two methods for obtaining the undistorted decay of the induced absorption. We show that the decay of the induced absorption is significantly different at carrier densities of 5.9 x 1017 cm" and 2.4 x 1018 cm'. The lower carrier density decay suggests that the data are consistent with the model for dispersive transport in amorphous materials.

Paper Details

Date Published: 12 March 1986
PDF: 11 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961075
Show Author Affiliations
Dale M. Roberts, The Standard Oil Company (Ohio) (United States)
Terry L. Gustafson, The Standard Oil Company (Ohio) (United States)


Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

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