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Proceedings Paper

In situ Studies Of The Bulk And Interface Structure Of a-Si:H
Author(s): R. W. Collins
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Paper Abstract

In this paper, recent results of a study of interface formation and microstructural evolution during the growth of hydrogenated amorphous silicon (a-Si:H) will be reviewed. In situ ellipsometry experiments using a photon energy of 3.4 eV have been applied to characterize the thin film nucleation process under different conditions of film preparation. In addition, monolayer sensitivity to changes in the modulation depth of surface roughness layers is achieved during growth. Spectroscopic ellipsometry measurements have been used to establish the absolute thickness of roughness layers at the surface of a-Si:H and at the a-Si02/a-Si:H interface. An in situ study of a-Si:H/a-SiNx:H/a-Si:H deposition reveals an asymmetry in the interface structure depending on the order of deposition. These are a sampling of the important results that establish ellipsometry as an ideal in situ probe of the growth morphology of thin film amorphous semiconductors.

Paper Details

Date Published: 12 March 1986
PDF: 9 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961074
Show Author Affiliations
R. W. Collins, The Standard Oil Company Research Center (United States)

Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

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