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Proceedings Paper

Bulk Limitation Effects in Amorphous Silicon Alloy Diodes
Author(s): V. Cannella; J. McGill; Z. Yaniv; M. Silver
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Paper Abstract

Because of the growing use of amorphous silicon alloys in microelectronic applications utilizing both the PIN and NIN structures, we have undertaken a study of the limitation imposed by the bulk intrinsic layers. In the former at voltages above approximately 0.8V, the bulk controlled current is recombination limited while in the latter it is space charge limited. As a consequence, the magnitude of the currents as well as the time and frequency responses are very different. Data documenting these differences are presented along with a model to explain these results.

Paper Details

Date Published: 12 March 1986
PDF: 5 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961072
Show Author Affiliations
V. Cannella, Ovonic Display Systems, Inc. (United States)
J. McGill, Ovonic Display Systems, Inc. (United States)
Z. Yaniv, Ovonic Display Systems, Inc. (United States)
M. Silver, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

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