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Proceedings Paper

Hydrogenated Amorphous Silicon And Microcrystalline Silicon For The Emitter Of Silicon Bipolar Transistors
Author(s): M. Ghannam; J. Nijs; R. De Keersmaecker; R. Mertens
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Paper Abstract

A silicon bipolar transistor which uses phosphorus doped hydrogenated amorphous silicon deposited by means of the glow discharge technique as a material for the emitter is presented. The advantage of using such material is that its energy band-gap is wider than that of single crystal silicon. Therefore, a barrier for hole injection into the emitter is created at the emitter-base heterojunction, resulting in a higher emitter efficiency. A maximum current gain of 14 at a base Gummel number of 1.35 x 1013 cm-4s is obtained, this value represents a 5-6 fold improvement over a conventional homojunction transistor with an indentical base region.

Paper Details

Date Published: 12 March 1986
PDF: 7 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961071
Show Author Affiliations
M. Ghannam, IMEC (Belgium)
J. Nijs, IMEC (Belgium)
R. De Keersmaecker, IMEC (Belgium)
R. Mertens, IMEC (Belgium)

Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

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