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Proceedings Paper

The Demands On The a-Si FET As A Pixel Switch For Liquid Crystal Displays
Author(s): W. W. Piper; J. E. Bigelow; D. E. Castleberry; G. E. Possin
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Paper Abstract

The matrix-addressed liquid crystal display (LCD) has attracted considerable attention in the past few years as an alternative to the cathode ray tube (CRT). This type of display has been demonstrated to have stable performance over a long life as well as the attractive features of small volume, light weight, low power, good brightness and full color. Amor-phous silicon (a-Si) is currently the preferred material for switch devices and plasma enhanced chemical vapor deposition (PECVD)is the preferred deposition technology since the process can be carried out at low temperature, yields material with a low density of defect states and affords good step coverage. The electrical requirements for an a-Si field effect transistor (FET) used as a pixel switch for a LCD include switching time, on current and off current. These parameters depend on the instrinsic characteristics of the amorphous materi-als used, the overall display structure and the device geometry. Present and potential material and geometry limitations will be discussed for different display systems of current interest.

Paper Details

Date Published: 12 March 1986
PDF: 6 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961067
Show Author Affiliations
W. W. Piper, General Electric Co. (United States)
J. E. Bigelow, General Electric Co. (United States)
D. E. Castleberry, General Electric Co. (United States)
G. E. Possin, General Electric Co. (United States)

Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

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