Share Email Print
cover

Proceedings Paper

Amorphous Semiconductors For Microelectronics
Author(s): Stanford R. Ovshinsky
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

It is now clear that amorphous materials will be the basis of the next great advance in microelectronics. In this paper, I intend to show why the field of microelectronics is presently in a state of crisis, and therefore historically ripe for a basic new approach. I will discuss how our approach using amorphous semiconductors will not only solve the crisis but also spur a new revolution, with the potential of the one of almost 40 years ago. The solid-state revolution, which began in 1947 with the invention of the transistor, was made possible by the ability to make crystalline materials (at that time, germanium) sufficiently free of defects that substitutional dopants could overcome the background noise of other defects and control the electronic transport properties of the semiconductor. Since the early 1930's Bloch, Wilson, and others had laid a sufficient theoretical groundwork in semiconductors so that transistor action could be predicted, demonstrated, and understood even though the point contact transistor had many mysteries associated with it. Figure 1 shows that historical lever that moved the world, the first transistor.

Paper Details

Date Published: 12 March 1986
PDF: 8 pages
Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961066
Show Author Affiliations
Stanford R. Ovshinsky, Energy Conversion Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 0617:
Amorphous Semiconductors for Microelectronics
David Adler, Editor(s)

© SPIE. Terms of Use
Back to Top