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Proceedings Paper

Invited Paper Radiation-Hardened Optoelectronic Components: Detectors
Author(s): James J. Wiczer
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Paper Abstract

In this talk, we will survey recent research in the area of radiation hardened optical detectors. We have studied conventional silicon photodiode structures, special radiation hardened silicon photodiodes, and special double heterojunction AlGaAs/GaAs photodiodes in neutron, gamma, pulsed x-ray and charged particle environments. We will present results of our work and summarize other research in this area. Our studies have shown at detectors can be made to function acceptably after exposures to neutron fluences of 1015 n/cm2, total dose gamma exposures of 108 rad (Si), and flash x-ray environments of 108 rad/sec (Si). We will describe detector structures that can operate through these conditions, pre-rad and post-rad operational characteristics, and experimental conditions that produced these results.

Paper Details

Date Published: 15 May 1986
PDF: 13 pages
Proc. SPIE 0616, Optical Technologies for Communication Satellite Applications, (15 May 1986); doi: 10.1117/12.961061
Show Author Affiliations
James J. Wiczer, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0616:
Optical Technologies for Communication Satellite Applications
Kul B. Bhasin, Editor(s)

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