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Proceedings Paper

Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen
Author(s): Paul G. Snyder; Bhola N. De; John A . WoolIam; T. J. Coutts; X. Li
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Paper Abstract

Indium tin oxide thin films (650 Å) were prepared by dc sputtering onto room temperature substrates. The films were exposed to an rf excited oxygen plasma, to qualitatively simulate the effects of atomic oxygen. Changes in optical, electrical, and structural properties were characterized as a function of exposure time.

Paper Details

Date Published: 26 October 1989
PDF: 3 pages
Proc. SPIE 1118, Space Optical Materials and Space Qualification of Optics, (26 October 1989); doi: 10.1117/12.960955
Show Author Affiliations
Paul G. Snyder, University of Nebraska (United States)
Bhola N. De, University of Nebraska (United States)
John A . WoolIam, University of Nebraska (United States)
T. J. Coutts, Solar Energy Research Institute (United States)
X. Li, Solar Energy Research Institute (United States)


Published in SPIE Proceedings Vol. 1118:
Space Optical Materials and Space Qualification of Optics
Robert R. Hale, Editor(s)

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