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Proceedings Paper

The Influence Of Dislocation Scattering On N-Type Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te Mobility
Author(s): Xu Xiaomin; Hu Xierong; Shen Jie
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Paper Abstract

The electronic mobility is an important parameter to express HgCdTe characters. The performance of photoconductive detectors, photovoltaic detectors and sprite detectors are all concerned with it. In our work, besides ionized impurity scattering, polar-optical scattering, acoustic deformation potential scattering and piezoelectric scattering, we also consider the dislocation scattering and give the result in accord with experiment. It shows that dislocation scattering is one of the important factors to influence HgCdTe electronic mobility. In our work, we also give a kind of amendment formula of ionized density. In addition, we also discuss the relationships between mobility and temperature and dislocation density. The result shows that, in the region 40K and 100K, the influence of dislocation is important and can not be neglected.

Paper Details

Date Published: 11 October 1989
PDF: 6 pages
Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); doi: 10.1117/12.960669
Show Author Affiliations
Xu Xiaomin, Shandong University (China)
Hu Xierong, Shandong University (China)
Shen Jie, Academia Sinica (China)


Published in SPIE Proceedings Vol. 1107:
Infrared Detectors, Focal Plane Arrays, and Imaging Sensors
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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