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Proceedings Paper

Absorption Coefficient Of N-Type Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te Samples
Author(s): Xie-qin Liang; Yu-qin Guo; Xie-rong Hu; Jia-xiong Fang; Guo-sen Xu
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Paper Abstract

In this paper, we've studied the effects of exciton absorption and the Burstain-Moss shift on the absorption above the energy gap of n-type direct semiconductors and derived a more common expression of absorption. In addition, we've discussed the reasons why the absorption peaks of exciton in HgCdTe haven't been observed in experiments. We also have calculated the absorption coefficient of the free carrier in n-type HgCdTe samples by assuming the four processes of electron transition in the conduction band are independent to each other.

Paper Details

Date Published: 11 October 1989
PDF: 7 pages
Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); doi: 10.1117/12.960668
Show Author Affiliations
Xie-qin Liang, Shandong University (China)
Yu-qin Guo, Shandong University (China)
Xie-rong Hu, Shandong University (China)
Jia-xiong Fang, Academia Sinica (China)
Guo-sen Xu, Academia Sinica (China)

Published in SPIE Proceedings Vol. 1107:
Infrared Detectors, Focal Plane Arrays, and Imaging Sensors
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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