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Proceedings Paper

The Time And Space Distribution Of Excess Carrier In SPRITE Device
Author(s): Xie-qin Liang; Yu-qin Guo; Xie-rong Hu; Jia-xiong Fang; Guo-sen Xu
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Paper Abstract

In this paper, we've studied the distribution of excess carrier in SPRITE device by solving the ambipolar continuity equation. Therefore, we've analysed boundary recombination effect and sweep-out effect on the lifetime of excess carrier in a device and the effect of applied field on the distribution, lifetime and Dλ* value.The results show the effect of boundary recombination on lifetime has to be less than body lifetime of material. The sanning velocity, body lifetime and applied field relate to each other. Only after synthesizing all kinds of specific needs, we can chose their values.

Paper Details

Date Published: 11 October 1989
PDF: 5 pages
Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); doi: 10.1117/12.960667
Show Author Affiliations
Xie-qin Liang, Shandong University (China)
Yu-qin Guo, Shandong University (China)
Xie-rong Hu, Shandong University (China)
Jia-xiong Fang, Academia Sinica (China)
Guo-sen Xu, Academia Sinica (China)


Published in SPIE Proceedings Vol. 1107:
Infrared Detectors, Focal Plane Arrays, and Imaging Sensors
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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