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Proceedings Paper

Measurements Of The Surface Recombination Velocity Of (Hg,Cd)Te
Author(s): W. H. Wright; V. C. Lopes; A. J. Syllaios
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Paper Abstract

The finite difference method has been used to solve the one dimensional carrier transport equation in order to study the surface recombination velocity s in (Hg,Cd)Te. This numerical approach was applied to the analysis of typical (Hg,Cd)Te configurations and was implemented in the reduction of photoconductive lifetime data to experimentally determine s in (Hg,Cd)Te. Contour maps of effective minority carrier lifetime and surface recombination velocity were used to study the spatial distribution and relationship between bulk and surface recombination. Experimentally, the PC lifetime and surface recombination velocity have been mapped on bromine-methanol polished surfaces and on anodic oxide passivated surfaces for (Hg,Cd)Te produced both by the solid state recrystallization (SSR) and the traveling heater methods (THM). The anodic oxide passivation has been observed to alter the magnitude and distribution of the PC lifetime measured, and it reduced the surface recombination velocity.

Paper Details

Date Published: 11 October 1989
PDF: 12 pages
Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); doi: 10.1117/12.960666
Show Author Affiliations
W. H. Wright, Texas Instruments Incorporated (United States)
V. C. Lopes, Texas Instruments Incorporated (United States)
A. J. Syllaios, Texas Instruments Incorporated (United States)

Published in SPIE Proceedings Vol. 1107:
Infrared Detectors, Focal Plane Arrays, and Imaging Sensors
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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