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Proceedings Paper

The Origin Of Instability In Metal/SiO[sub]2[/sub]/InSb Capacitor Fabricated By Photo-Enhanced Chemical Vapor Deposition
Author(s): Tai-Ping Sun; Si-Chen Lee; Sheng-Jenn Yang
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Paper Abstract

The AuCriSiO2/InSb Metal-Oxide-Semiconductor capacitor was fabricated using photo-enhanced chemical vapor deposition. The electrical and structural properties were analyzed by capacitance-voltage and Auger electron spectroscopy , respectively. The high frequency (1 MHz) capacitance-voltage measurements were usually performed after positive or negative bias-temperature stressing. Both the flat-band voltage shift and the change of hysteresis of capacitance-voltage curve indicate the existence of enormous negative mobile charges in the bulk SiO2. Auger depth profile reveals that these negative mobile charges are metallic indium and antimony ions.

Paper Details

Date Published: 11 October 1989
PDF: 12 pages
Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); doi: 10.1117/12.960662
Show Author Affiliations
Tai-Ping Sun, National Taiwan University (Taiwan)
Si-Chen Lee, National Taiwan University (Taiwan)
Sheng-Jenn Yang, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 1107:
Infrared Detectors, Focal Plane Arrays, and Imaging Sensors
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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