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Proceedings Paper

The MBE Growth And Electronic Structure Of a-SnxGe1-x Alloys
Author(s): Hartmut Hochst; Michael A. Engelhardt; David W. Niles
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Paper Abstract

The MBE growth and electronic structure of a-SnxGe i_x alloy films were studied with RHEED and angle resolved synchrotron radiation photoemission spectroscopy. Doe to an increased interfacial reactivity, CdTe substrates are not suitable for the epitaxial growth of homogeneous films with x>0.1. Alloy films with good crystalline quality can be grown on Ge(100) substrates at approx 400 C. The expected closing of the alloy band gap is confirmed by photoemission data which show the shift of the T8 valence band maximum from -0.6 eV in Ge(100) to -0.16 eV below EF in a-Sn0.48 Ge0.52

Paper Details

Date Published: 12 September 1989
PDF: 7 pages
Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960639
Show Author Affiliations
Hartmut Hochst, University of Wisconsin-Madison (United States)
Michael A. Engelhardt, University of Wisconsin-Madison (United States)
David W. Niles, University of Wisconsin-Madison (United States)

Published in SPIE Proceedings Vol. 1106:
Future Infrared Detector Materials
Jan W. Baars; Randolph E. Longshore, Editor(s)

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