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Proceedings Paper

The Role Of n+-Accumulation Layers On The Carrier Lifetime Of n-Hg1-xCdxTe
Author(s): G. Mahr von Staszewski; R. Wollrab
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Paper Abstract

A strong reduction of the n+-accumulation layer in n-Hgl-xCdxTe (MCT) samples after UV-irradiation was recently reported l 2 3 4. This effect produced by electron trapping in deep levels of the passivation oxide, lasts several hours at 77 K and even more at 4 K. The sample surfaces are driven into a "quasi" depletion state. Upon UV-illumination we now observed a ten-fold decrease in the carrier lifetime. Obviously this is a consequence of the "quasi" depletion state, in which the electron-holes pairs recombine now with a much shorter time constant characteristical of the depletion regions 5 8.

Paper Details

Date Published: 12 September 1989
PDF: 7 pages
Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960634
Show Author Affiliations
G. Mahr von Staszewski, Physikalisches Institut der Universitat zu KoIn (Federal Republic Germany)
R. Wollrab, Physikalisches Institut der Universitat zu KoIn (Federal Republic Germany)

Published in SPIE Proceedings Vol. 1106:
Future Infrared Detector Materials
Jan W. Baars; Randolph E. Longshore, Editor(s)

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