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Proceedings Paper

High Mobility LPE HgCdTe By Post Growth Indium Doping
Author(s): P. Koppel; K. E. Owens; R. E. Longshore
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Paper Abstract

N-type, 5LPE2 HgCdTe, with carrier concentrations of 2 x 10 14 cm-3 and mobilites greater than 1 x 10 5 cm /V-s, at 20 K, were produced by a Hg-vapor anneal of the as-grown, p-type starting material, followed by diffusion of an evaporated indium layer. When the Hg-vapor anneal follows the indium diffusion, the material remains p-type, indicating that the two steps are not commutative. Experimental techniques used to explore these differences were Hall effect, capacitance-voltage measurements on MIS structures, photoconductive lifetime, and SIMS. Possible causes of the differences in electrical properties between the two cases are discussed. The low temperature mobilities obtained for the n-type LPE layers compare well with bulk data from other workers. A calculation of the transport properties for the n-type case is also presented to show the effects of compensation.

Paper Details

Date Published: 12 September 1989
PDF: 9 pages
Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960630
Show Author Affiliations
P. Koppel, McDonnell Douglas Corporation (United States)
K. E. Owens, McDonnell Douglas Corporation (United States)
R. E. Longshore, McDonnell Douglas Corporation (United States)


Published in SPIE Proceedings Vol. 1106:
Future Infrared Detector Materials
Jan W. Baars; Randolph E. Longshore, Editor(s)

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