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Proceedings Paper

(Hg,Zn)Te Among The Other Materials For IR Detection
Author(s): R. Triboulet; M. Bourdillot; A. Durand; T. Duy Nguyen
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Paper Abstract

The advantages predicted for (Hg,Zn)Te over (Hg,Cd)Te are stressed. The(Hg,Zn)Te alloys are then situated, according to their properties in IR detection at 10.6 μm, among the other II-VI ternary alloys and some low dimensional III-V's. The different techniques used so far for MZT bulk and epitaxial growth are reviewed. The problem of substrates for the growth of MZT by liquid phase epitaxy is discussed. Finally recent results on MZT device performances, and mainly on the reliability of photodiodes, confirm the advantages predicted for MZT over MCT.

Paper Details

Date Published: 12 September 1989
PDF: 7 pages
Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960627
Show Author Affiliations
R. Triboulet, Laboratoire de Physique des Solides de Bellevue (France )
M. Bourdillot, Societe Anonyme de Telecommunications (France )
A. Durand, Societe Anonyme de Telecommunications (France )
T. Duy Nguyen, Societe Anonyme de Telecommunications (France )


Published in SPIE Proceedings Vol. 1106:
Future Infrared Detector Materials
Jan W. Baars; Randolph E. Longshore, Editor(s)

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