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Proceedings Paper

New Techniques For The Growth Of HgCdTe By Molecular Beam Epitaxy
Author(s): C. J. Summers; R. G. Benz II; B. K. Wagner; J. D. Benson; D. Rajavel
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Paper Abstract

We present in this review a brief appraisal of the current status of HgCdTe layers grown by Molecular Beam Epitaxy (MBE). Although this technique has produced unique material structures such as HgTe:CdTe superlattices and HglxCdxTe/Hgl-yCdyTe heterostructures, there are still significant problems in 'obtaining high quality detector materials. In this paper an attempt is made to identify some of the possible causes of these problems. These difficulties are divided into two classifications: problems related to the control over the growth technique, and the basic material science issues concerning the metallurgical properties of these alloys and the surface nucleation mechanisms responsible for epitaxy by MBE. Following this review, some of the work performed at Georgia Tech to provide answers to the identified problems is presented. An argument is then made for the growth of these alloys by a photon-assisted chemical beam epitaxy (PACBE) technique which is shown to provide the capability for both fundamental studies of surface nucleation kinetics, and we believe the growth of high-quality materials.

Paper Details

Date Published: 12 September 1989
PDF: 15 pages
Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960624
Show Author Affiliations
C. J. Summers, Georgia Tech Research Institute (United States)
R. G. Benz II, Georgia Tech Research Institute (United States)
B. K. Wagner, Georgia Tech Research Institute (United States)
J. D. Benson, Georgia Tech Research Institute (United States)
D. Rajavel, Georgia Tech Research Institute (United States)

Published in SPIE Proceedings Vol. 1106:
Future Infrared Detector Materials
Jan W. Baars; Randolph E. Longshore, Editor(s)

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