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Proceedings Paper

Planar GaAs And GaAs/A10.3GaolAs Schottky Barrier Photodiodes With High-Speed And High-Sensitivity
Author(s): D. H. Lee; Sheng Li; S. J. Lee; N. G. Paulter
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Paper Abstract

Planar GaAs and GaAs/A103Ga0.7As Schottky barrier photodiodes with high-speed and high-sensitivity have been fabricated and characterized. In order to improves the sensitivity of photo-diodes, surface passivation and antireflection coatings have been performed using various dielectric films, such as Si02, Si3N4, and polyimide. The internal quantum efficiency of 60% to 77% and the responsivity of 0.47 A/W to 0.6 A/W were measured for the wavelength range of 0.5 μm to 0.84 μm. A rise time of 8.5 ps and a 3-dB cutoff frequency of 42 GHz were measured for the GaAs/A10.3Ga0.7As photodiode, whereas 15 ps and 24 GHz were measured for the GaAs photodiode.

Paper Details

Date Published: 14 August 1989
PDF: 7 pages
Proc. SPIE 1102, Optical Technology for Microwave Applications IV, (14 August 1989); doi: 10.1117/12.960537
Show Author Affiliations
D. H. Lee, University of Florida (United States)
Sheng Li, University of Florida (United States)
S. J. Lee, University of Florida (United States)
N. G. Paulter, Los Alamos National Laboratory (United States)


Published in SPIE Proceedings Vol. 1102:
Optical Technology for Microwave Applications IV
Shi-Kay Yao, Editor(s)

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