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Proceedings Paper

Large Area Epitaxial HgCdTe Growth For Second Generation IRFPA Applications
Author(s): W. Higgins; J. Egerton; P. Zimmermann; M. Reine; A. Sood; C. Johnson
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Paper Abstract

Large area HgCdTe epitaxial films grown on CdTe substrates are routinely used to produce high quality devices. Scaleup of substrate and liquid phase epitaxial (LPE) film growth and characterization processes will give techniques capable of supplying the throughput of low cost, high quality material required for manufacturing of large area infrared focal plane arrays (IRFPA).

Paper Details

Date Published: 13 September 1989
PDF: 12 pages
Proc. SPIE 1097, Materials, Devices, Techniques, and Applications for Z-Plane Focal Plane Array, (13 September 1989); doi: 10.1117/12.960384
Show Author Affiliations
W. Higgins, Honeywell, Inc. (United States)
J. Egerton, Honeywell, Inc. (United States)
P. Zimmermann, Honeywell, Inc. (United States)
M. Reine, Honeywell, Inc. (United States)
A. Sood, Honeywell, Inc. (United States)
C. Johnson, II-VI,Inc. (United States)

Published in SPIE Proceedings Vol. 1097:
Materials, Devices, Techniques, and Applications for Z-Plane Focal Plane Array
John C. Carson, Editor(s)

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