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Proceedings Paper

Assisted Arf Excimer Photo-Etching Of Mercury Cadmium Telluride (MGT) Semiconductor
Author(s): Alain Azema; Jean Botineau; Philippe Gaucherel; Jean-Claude Roustan
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Paper Abstract

UV excimer etching could be an alternative method to classical lithography for the conversion of MOT planar waveguides into strip waveguides. Some preliminary results are given, which concern HgCdTe photoablation by ArF excimer laser emitting at 193 nm, under inert or chemically active surrounding gas conditions.

Paper Details

Date Published: 16 December 1988
PDF: 4 pages
Proc. SPIE 0998, Excimer Beam Applications, (16 December 1988); doi: 10.1117/12.960212
Show Author Affiliations
Alain Azema, Laboratoire de Physique de la Matiere Condensee (France)
Jean Botineau, Laboratoire de Physique de la Matiere Condensee (France)
Philippe Gaucherel, Laboratoire de Physique de la Matiere Condensee (France)
Jean-Claude Roustan, Laboratoire de Physique de la Matiere Condensee (France)


Published in SPIE Proceedings Vol. 0998:
Excimer Beam Applications
Anthony N. Pirri; Bernhard P. Piwczyk, Editor(s)

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