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Proceedings Paper

High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes
Author(s): J. N. Hollenhorst; D. T. Ekholm; J. M. Geary; V. D. Mattera; R. Pawelek
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Paper Abstract

We have developed planar InGaAs/InP avalanche photodiodes based on trichloride YPE material. Gain-bandwidth-products greater than 70 GHz and bandwidths above 5 GHz at a gain of 10 make these devices attractive for high frequency digital and analog communication. This paper discusses the effects that limit the bandwidth of heterostructure APDs and the design, fabrication, measurement and performance of our devices.

Paper Details

Date Published: 17 January 1989
PDF: 8 pages
Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); doi: 10.1117/12.960144
Show Author Affiliations
J. N. Hollenhorst, AT&T Bell Laboratories (United States)
D. T. Ekholm, AT&T Bell Laboratories (United States)
J. M. Geary, AT&T Bell Laboratories (United States)
V. D. Mattera, AT&T Bell Laboratories (United States)
R. Pawelek, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0995:
High Frequency Analog Communications
Paul Sierak, Editor(s)

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