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Proceedings Paper

High Power 1.3 µm Laser With Modulation Bandwidth To X-Band
Author(s): W. Ng
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Paper Abstract

Recent progress in the development of high power("37 mW) and high speed ("11.5 GHz) p-substrate GaInAsP buried crescent lasers is summarized. Their modulation characteristics, such as signal to noise ratio and two-tone intermodulation distortion, are described. In addition, preliminary results for buried crescent lasers fabricated on semi-insulating InP substrates are presented.

Paper Details

Date Published: 17 January 1989
PDF: 4 pages
Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); doi: 10.1117/12.960138
Show Author Affiliations
W. Ng, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0995:
High Frequency Analog Communications
Paul Sierak, Editor(s)

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