Share Email Print

Proceedings Paper

High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling
Author(s): S. Y. Huang; W. H. Cheng; J. Pooladdej; A. Appelbaum; D. Renner; K. L. Hess; S. W. Zehr
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A high-speed and high-power InGaAsP semi-insulating buried crescent (SIBC) laser operating at 1.3-μm wavelength is described. The laser is fabricated with two epitaxial growth steps. A 3-dB direct modulation bandwidth of 11 GHz and a maximum cw output power of 42 mW have been achieved. A model based on rate equations is used to analyze these laser diodes. The effects of packaging and device parasitics on high-speed modulation are incorporated through a simple circuit configuration. The calculated frequency response is in good agreement with the measured response. The model is then used to predict the maximum obtainable modulation bandwidth. Finally, the measured relative intensity noise performance of the SIBC laser is presented.

Paper Details

Date Published: 17 January 1989
PDF: 10 pages
Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); doi: 10.1117/12.960137
Show Author Affiliations
S. Y. Huang, Rockwell International CorpOration. (United States)
W. H. Cheng, Rockwell International Corporation (United States)
J. Pooladdej, Rockwell International Corporation (United States)
A. Appelbaum, Rockwell International Corporation (United States)
D. Renner, Rockwell International Corporation (United States)
K. L. Hess, Rockwell International Corporation (United States)
S. W. Zehr, Rockwell International Corporation (United States)

Published in SPIE Proceedings Vol. 0995:
High Frequency Analog Communications
Paul Sierak, Editor(s)

© SPIE. Terms of Use
Back to Top