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Proceedings Paper

An Inversion Channel Technology For Opto-Electronic Integration
Author(s): G. W. Taylor; D. L. Crawford; P. A. Kiely; P. Cooke; S. Sargood; A. Izabelle; T. Y. Chang; B. Tell; M. S. Lebby; K. Brown-Goebeler
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Paper Abstract

A new approach to optoelectronic integration is reported which combines electronic and optical devices fabricated with a common sequence and a single MBE wafer growth. The devices have in common, an inversion layer structure produced by charge sheet doping.

Paper Details

Date Published: 9 February 1989
PDF: 7 pages
Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); doi: 10.1117/12.960136
Show Author Affiliations
G. W. Taylor, AT&T Bell Laboratories (United States)
D. L. Crawford, AT&T Bell Laboratories (United States)
P. A. Kiely, AT&T Bell Laboratories (United States)
P. Cooke, AT&T Bell Laboratories (United States)
S. Sargood, AT&T Bell Laboratories (United States)
A. Izabelle, AT&T Bell Laboratories (United States)
T. Y. Chang, AT&T Bell Laboratories (United States)
B. Tell, AT&T Bell Laboratories (United States)
M. S. Lebby, AT&T Bell Laboratories (United States)
K. Brown-Goebeler, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0994:
Optoelectronic Materials, Devices, Packaging, and Interconnects II
Glen M. McWright; Henry J. Wojtunik, Editor(s)

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