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Proceedings Paper

Bandfilling Electro-Optic Effect In InP, GaAs, GaSb, InAs, and InSb
Author(s): Brian R. Bennett; Richard A. Soref
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Paper Abstract

Detailed calculations have been made of the change in refractive index and absorption of InP, GaAs, GaSb, InAs, and InSb produced by electrical injection of electrons or holes. Bandfilling, band-gap shrinkage, and the plasma effect were taken into account. A wide range of carrier concentrations and optical wavelengths was considered. The total electro-optic effect is relatively large at high levels of injection (or depletion). Index changes of 10-2, or more, are predicted and suggest that low-loss phase modulators and switches using carrier injection are feasible in these materials.

Paper Details

Date Published: 9 February 1989
PDF: 20 pages
Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); doi: 10.1117/12.960125
Show Author Affiliations
Brian R. Bennett, Rome Air Development Center (United States)
Richard A. Soref, Rome Air Development Center (United States)


Published in SPIE Proceedings Vol. 0994:
Optoelectronic Materials, Devices, Packaging, and Interconnects II
Glen M. McWright; Henry J. Wojtunik, Editor(s)

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