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Proceedings Paper

Optoelectronic Material Cd[sub]1-x[/sub]Zn[sub]x[/sub]Te: Growth Characterization Applications
Author(s): Sudhir B. Trivedi; Ronald G. Rosemeier
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Paper Abstract

Initial interest in II-VI compound Cd1-xZnxTe has been due to its suitability as a good substrate material to grow Hg1-xCdxTe and Hg1-xZnxTe epilayers for building IR focal plane arrays. However, this material has potential applications as optical modulators, IR laser windows, and γ-ray detectors. For all the above-mentioned applications, compositionally and structurally homogeneous Cd1-xZnxTe crystals are needed. The present study focuses on the growth of Cd1-ZnxTe single crystals. Crystals were grown using a modified Bridgman technique in which both furnace and growth ampoule are kept stationary and the growth is accomplished by controlled cooling of the furnace. The resulting crystals are characterized with respect to their crystallographic perfection using chemical etching. The effect of annealing of the crystals is investigated; suitability of this material for various applications is discussed.

Paper Details

Date Published: 9 February 1989
PDF: 6 pages
Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); doi: 10.1117/12.960123
Show Author Affiliations
Sudhir B. Trivedi, Brimrose Corporation of America (United States)
Ronald G. Rosemeier, Brimrose Corporation of America (United States)

Published in SPIE Proceedings Vol. 0994:
Optoelectronic Materials, Devices, Packaging, and Interconnects II
Glen M. McWright; Henry J. Wojtunik, Editor(s)

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