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Proceedings Paper

Geometry And Surface Effects On III-V MSM Diodes For High-Speed Optoelectronic Impedance Switches
Author(s): Sankar Ray; Robert B. Darling
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Paper Abstract

Metal semiconductor metal (MSM) photoconductive switches were fabricated on GaAs substrates to study the on-resistance (Ron) at a low bias of 0.5 V, and low input optical power of 1mW. A simple dc model was developed which explained the observed dependence of Ron on geometry and surface condition of the device.

Paper Details

Date Published: 9 February 1989
PDF: 6 pages
Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); doi: 10.1117/12.960122
Show Author Affiliations
Sankar Ray, Boeing Electronics (United States)
Robert B. Darling, University of Washington (United States)

Published in SPIE Proceedings Vol. 0994:
Optoelectronic Materials, Devices, Packaging, and Interconnects II
Glen M. McWright; Henry J. Wojtunik, Editor(s)

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