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Proceedings Paper

Electrorefraction In Semiconductor Quantum Wells
Author(s): J. E. Zucker
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Paper Abstract

We have measured electric-field-induced changes in refractive index in GaAs- and InP-based quantum well heterostructures. Excitonic effects provide index changes one to two orders of magnitude larger than in corresponding bulk semiconductors. This enhancement can be applied to low-voltage, compact devices for electro-optic phase modulation.

Paper Details

Date Published: 9 February 1989
PDF: 6 pages
Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); doi: 10.1117/12.960121
Show Author Affiliations
J. E. Zucker, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0994:
Optoelectronic Materials, Devices, Packaging, and Interconnects II
Glen M. McWright; Henry J. Wojtunik, Editor(s)

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