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Proceedings Paper

Picosecond Pulsing And Sampling By GaAs Photodetectors Fabricated On Silicon Substrates
Author(s): J. D. Morse; M. D. Pocha; R. W. Dutton; G. D. Anderson; J. W. Adkisson
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Paper Abstract

Picosecond photoconductivity by Gallium Arsenide grown directly on silicon and silicon dioxide by Molecular Beam Epitaxy (MBE) has been investigated. Initial results from high speed measurements have demonstrated the potential of this material to achieve sub-10 picosecond recombination lifetimes for photogenerated carriers, while retaining reasonable effective drift mobilities. Thus, photodetectors fabricated from this material can be applied as picosecond pulsing and sampling circuit elements for both silicon and GaAs integrated circuit technologies.

Paper Details

Date Published: 9 February 1989
PDF: 4 pages
Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); doi: 10.1117/12.960118
Show Author Affiliations
J. D. Morse, Lawrence Livermore National Laboratory (United States)
M. D. Pocha, Lawrence Livermore National Laboratory (United States)
R. W. Dutton, Stanford University (United States)
G. D. Anderson, Stanford University (United States)
J. W. Adkisson, Stanford University (United States)


Published in SPIE Proceedings Vol. 0994:
Optoelectronic Materials, Devices, Packaging, and Interconnects II
Glen M. McWright; Henry J. Wojtunik, Editor(s)

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