Share Email Print

Proceedings Paper

Field-, Polarity-, And Position-Dependent Photocurrent In Semi-Insulating Single Crystal GaAs
Author(s): G. C. Vezzoli; Terence Burke; M. Weiner; S. Levy; B. Lalevic
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Photocurrent studies have been performed on single crystal EL2 compensated semi-insulating GaAs as a function of polarity (using several methods of contact and two crystal orientations) and as a function of position of LED illumination (λ=0.905μ ). The total current (photo + dark) vs time traces for these studies are non linear and reflect three zones of behavior. When the crystal is illuminated near one extremity, the change in polarity causes a non-linear depression in the trace corresponding to positive polarity. In addition, the latter trace consistently shows the presence of small somewhat irregular oscillations of frequency (50MHZ). We interpret the observations to be indicative of: (1) non-uniform longitudinal (110) trap distribution; and (2) non-symmetric potential vs. distance profile suggesting a possible recombination front near the mode.

Paper Details

Date Published: 6 December 1988
PDF: 5 pages
Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); doi: 10.1117/12.960090
Show Author Affiliations
G. C. Vezzoli, U.S. Army Materials Technology Laboratory and Rutgers University (United States)
Terence Burke, U.S. Army Electronics and Devices Laboratory (United States)
M. Weiner, U.S. Army Electronics and Devices Laboratory (United States)
S. Levy, U.S. Army Electronics and Devices Laboratory (United States)
B. Lalevic, Rutgers University (United States)

Published in SPIE Proceedings Vol. 0993:
Integrated Optical Circuit Engineering VI
Mark A. Mentzer, Editor(s)

© SPIE. Terms of Use
Back to Top