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Proceedings Paper

High-Sensitivity Bandpass RF Modulator In LiNbO3
Author(s): G. E. Betts; L. M. Johnson; C. H. Cox
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Paper Abstract

High-sensitivity lumped-element bandpass modulators in lithium niobate have been designed and evaluated. We discuss what ultimately limits the modulator response, then describe a passive resonant drive circuit, and give some experimental results from modulators using it. This circuit improves the response over that of a baseband device, but does so at the expense of reducing the bandwidth. Finally, we give experimental results from an optical link that uses this modulator. The high modulator response (equivalent to Vπ = 250 mV at 50 0) gives the link an input sensitivity only 16 dB above thermal noise while preserving a large dynamic range.

Paper Details

Date Published: 6 December 1988
PDF: 7 pages
Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); doi: 10.1117/12.960078
Show Author Affiliations
G. E. Betts, Massachusetts Institute of Technology (United States)
L. M. Johnson, Massachusetts Institute of Technology (United States)
C. H. Cox, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0993:
Integrated Optical Circuit Engineering VI
Mark A. Mentzer, Editor(s)

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