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Proceedings Paper

LiNbO3 High Speed Travelling Wave Electro-Optic Waveguide Devices
Author(s): A. R. Beaumont; K. R. Preston; B. M. Macdonald; R. N. Shaw; R. A. Harmon; C. W. Ford; A. P. Thomas; R. P. Merrett; R. C. Booth
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Paper Abstract

The fabrication of LiNbO3 travelling wave electrodes is described. It is shown that devices with plasma etched Al electrodes can perform as well as devices employing the more conventional electro-plated Au technology and that bandwidths in excess of 12 GHz can readily be achieved. The reliability of travelling wave devices with plasma etched Al electrodes is considered and it is shown that metallisation lifetimes in excess of 16 years are currently predicted. The problems of using LiNb03 travelling wave devices in practical optical fibre systems are reviewed and it is shown that the use of a dedicated high speed drive amplifier can result in considerable simplification. The design and fabrication of such an amplifier based on GaAs technology is described and its use in a 1.8 Gbit s-1 optical fibre system reported.

Paper Details

Date Published: 6 December 1988
PDF: 8 pages
Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); doi: 10.1117/12.960076
Show Author Affiliations
A. R. Beaumont, British Telecom Research Laboratories (United Kingdom)
K. R. Preston, British Telecom Research Laboratories (United Kingdom)
B. M. Macdonald, British Telecom Research Laboratories (United Kingdom)
R. N. Shaw, British Telecom Research Laboratories (United Kingdom)
R. A. Harmon, British Telecom Research Laboratories (United Kingdom)
C. W. Ford, British Telecom Research Laboratories (United Kingdom)
A. P. Thomas, British Telecom Research Laboratories (United Kingdom)
R. P. Merrett, British Telecom Research Laboratories (United Kingdom)
R. C. Booth, British Telecom Research Laboratories (United Kingdom)


Published in SPIE Proceedings Vol. 0993:
Integrated Optical Circuit Engineering VI
Mark A. Mentzer, Editor(s)

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