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Proceedings Paper

Heavy Doping Effect In P-N Junction Photodetector Cell
Author(s): Tapan Kumar Gupta
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Paper Abstract

ABSTRACT The effect of heavy doping (ND>1020cm-3) in n+p region of n+p junction devices were studied. The experimental investigation was done by fabricating different specially fabricated n+ junctions with different carrier concentrations ranging 1 x 1018 - 5 x 1020 cm-3 on a p-type boron doped silicon substrate. The heavy doping was found to have introduced a narrowing of bandgap energy. The contradictory behavior of bandgap shrinkage above 2 x 1020 cm-3 donor density was explained on the basis of FermiDirac Statistics. Lastly, the experimental data had been utilized to arrive at an empirical equation which through iteratively least squares reweighted techniques described the dependence of FDSE on doping concentration.

Paper Details

Date Published: 26 April 1989
PDF: 9 pages
Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989); doi: 10.1117/12.960061
Show Author Affiliations
Tapan Kumar Gupta, Tufts University (United States)

Published in SPIE Proceedings Vol. 0992:
Fiber Optics Reliability: Benign and Adverse Environments II
Roger A. Greenwell; Dilip K. Paul; Shekhar G. Wadekar, Editor(s)

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