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Proceedings Paper

Radiation Induced Loss In Undoped And F-Doped Silica
Author(s): H. Fabian; K. F. Klein; A. Muhlich; K. H. Worner; H. Henschel; O. Kohn; H. U. Schmidt
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Paper Abstract

The radiation resistance of undoped and F-doped synthetic silica is investigated at 840 nm and 1308 nm wavelength. At both wavelengths the F-doped silica shows improved radiation resistance compared to that of the undoped water-free silica. The recovery behaviour after pulsed irradiation of both materials can be devided into three phases with different recovery coefficients. Our results are compared with those from earlier work.

Paper Details

Date Published: 26 April 1989
PDF: 7 pages
Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989); doi: 10.1117/12.960037
Show Author Affiliations
H. Fabian, Heraeus Quarzschmelze GmbH (Germany)
K. F. Klein, Heraeus Quarzschmelze GmbH (Germany)
A. Muhlich, Heraeus Quarzschmelze GmbH (Germany)
K. H. Worner, Heraeus Quarzschmelze GmbH (Germany)
H. Henschel, Fraunhofer INT (Germany)
O. Kohn, Fraunhofer INT (Germany)
H. U. Schmidt, Fraunhofer INT (Germany)


Published in SPIE Proceedings Vol. 0992:
Fiber Optics Reliability: Benign and Adverse Environments II
Roger A. Greenwell; Dilip K. Paul; Shekhar G. Wadekar, Editor(s)

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