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Proceedings Paper

Intracavity Loss Modulation Of GalnAsP Lasers
Author(s): D. Z. Tsang; J. N. Walpole; S. H. Groves; J. J. Hsieh; J. P. Donnelly
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Paper Abstract

GaInAsP/InP diode lasers with a monolithically integrated electroabsorption modulator have been fabricated from a conventional double-heterostructure wafer. The additional intracavity loss produced by operating the modulator near maximum reverse bias increased the laser threshold by a factor of as much as 2.9 relative to the threshold with the modulator open-circuited. Large depth of modulation of the laser output at frequencies up to 2.5 GHz, the measurement system limit, has been achieved by repetitively Q-switching the laser.

Paper Details

Date Published: 29 July 1981
PDF: 3 pages
Proc. SPIE 0269, Integrated Optics I, (29 July 1981); doi: 10.1117/12.959957
Show Author Affiliations
D. Z. Tsang, Massachusetts Institute of Technology (United States)
J. N. Walpole, Massachusetts Institute of Technology (United States)
S. H. Groves, Massachusetts Institute of Technology (United States)
J. J. Hsieh, Massachusetts Institute of Technology (United States)
J. P. Donnelly, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0269:
Integrated Optics I
Esther Krikorian; Harold M. Stoll, Editor(s)

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