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Proceedings Paper

Submicron Grating Fabrication On GaAs
Author(s): D. Heflinger; J. Kirk; R. Cordero; G. Evans
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Paper Abstract

The laboratory techniques used for the fabrication of submicron gratings in GaAs are presented. A thin (≈1250 Å) film of Shipley AZ1450B photoresist on GaAs is exposed holographically with the use of the 4579 A line of an argon ion laser to produce gratings with a period of approximately 0.35 μm. Data are presented that demonstrate the effects of variation of the following parameters: developer type, developer time, laser intensity, exposure time, photoresist thickness, and ion beam etching parameters. Relative grating efficiency measurements as a function of parameter variations indicate an optimum set of parameters for grating fabrication.

Paper Details

Date Published: 29 July 1981
PDF: 6 pages
Proc. SPIE 0269, Integrated Optics I, (29 July 1981); doi: 10.1117/12.959951
Show Author Affiliations
D. Heflinger, The Aerospace Corporation (United States)
J. Kirk, The Aerospace Corporation (United States)
R. Cordero, The Aerospace Corporation (United States)
G. Evans, The Aerospace Corporation (United States)

Published in SPIE Proceedings Vol. 0269:
Integrated Optics I
Esther Krikorian; Harold M. Stoll, Editor(s)

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