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Proceedings Paper

Reliable (AlGa)As DH Lasers Grown By Molecular Beam Epitaxy For Optical Communication Systems
Author(s): W. T. Tsang
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Paper Abstract

Recent results obtained from the evaluation of proton-bombarded (AiGa)As DR stripe geometry lasers fabricated from DH wafers grown by molecular beam epitaxy (MBE) as sources in optical communication systems is reviewed. These DH wafers contain 8% AℓAs in the active layer. The MBE lasers were shown to maintain their excellent cw device characteristics stably at elevated temperatures (55°-70°C). The measured coefficient (T0) of the temperature dependence of the current threshold (Ith) for MBE lasers is discussed, and it is shown that it can be (≥220°C in the temperature range -50° to 85°C. The frequencies of self-pulsation for MBE lasers not mirror coated at the power levels used for optical communications, measured after 100 hours of accelerated aging at the elevated temperature of 55°-70°C are typically > 1 Gigahertz. This minimizes the adverse effects of self-pulsation upon laser performance. Long-term aging of MBE lasers at elevated temperature (70°C) under constant power output of 3 mW/mirror has also been carried out for lasers from several wafers. Lasers from two early wafers are still operating after hours at 70°C. When plotted on the usual log-normal graph, a median lifetime τm of ≈ 8,500 hrs. at 70°C is expected. The MBE lasers have also been evaluated, tested and aged in transmitters. The results obtained thus far show that they meet the objectives for use in 45/Mbs FT-3 lightwave transmission systems.

Paper Details

Date Published: 29 July 1981
PDF: 8 pages
Proc. SPIE 0269, Integrated Optics I, (29 July 1981); doi: 10.1117/12.959947
Show Author Affiliations
W. T. Tsang, Bell Telephone Laboratories (United States)


Published in SPIE Proceedings Vol. 0269:
Integrated Optics I
Esther Krikorian; Harold M. Stoll, Editor(s)

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